IRF520N HEXFET® Power MOSFET
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Niveau: Secondaire, Lycée, Terminale IRF520N HEXFET® Power MOSFET PD - 91339A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A IDM Pulsed Drain Current ? 38 PD @TC = 25°C Power Dissipation 48 W Linear Derating Factor 0.32 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy? 91 mJ IAR Avalanche Current? 5.7 A EAR Repetitive Avalanche Energy? 4.8 mJ dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ.
- units conditions
- tj ≤
- source current
- body diode
- drain current
- thermal response
- avalanche energy?
- typical output